Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Patent
1993-01-26
1994-03-22
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
H01L 4500
Patent
active
052967220
ABSTRACT:
A memory cell includes a pair of spaced apart conductors on an insulating layer, and a novel electrically alterable resistive component between the conductors. This resistive component consists essentially of a single element semiconductor selected from the group of Si, Ge, C, and .alpha.-Sn, having a crystalline grain size which is smaller than polycrystalline. Dopant atoms in the semiconductor are limited to be less than 10.sup.17 atoms/CM.sup.3 ; and, such a doping range includes zero doping. All dopant atoms are interstitial in the semiconductor crystals and not substitutional.
REFERENCES:
patent: 4146902 (1979-03-01), Tanimoto et al.
Genter Melvyn E.
Potash Hanan
Roesner Bruce B.
Fassbender Charles J.
Larkins William D.
Starr Mark T.
Unisys Corporation
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