Electrically alterable read only memory semiconductor device mad

Details Electrically alterable read only memory semiconductor device mad Electrically alterable read only memory semiconductor device mad

1980-02-12

1982-05-25

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576R, 427 94, H01L 2118

Patent

active

043309305

ABSTRACT:
An electrically alterable read only memory (EAROM) having a tunneling layer of an insulating material such as silicon dioxide which is grown on the substrate by thermal oxidation carried out at low pressure and a layer of silicon nitride laid down on the tunneling layer by a low-pressure chemical vapor deposition, the interface of the two layers forming a charge storage area with the EAROM having improved read/write switching capability and quality, and improved reliability and memory retentivity characteristics.

REFERENCES:
patent: 3485666 (1969-12-01), Sterling et al.
patent: 3520722 (1970-07-01), Scott
patent: 3540926 (1970-11-01), Rairden
patent: 4011576 (1977-03-01), Uchida
patent: 4140548 (1979-02-01), Zimmer
patent: 4198252 (1980-04-01), Hsu
Rosler, Solid State Technology, Apr. 1977, pp. 63-69.
DeLong, "Advances in Dichlorosilane Epitaxial Technology", Solid State Technology, Oct. 1972, pp. 29-41.

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