Electrically alterable read only memory cell

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

357 41, 3072383, H01L 2978, H01L 2702

Patent

active

044045778

ABSTRACT:
A reduction in cell area and an improvement in tolerance allowed for programming and erase voltages is achieved utilizing a diffused control gate having improved capacitive coupling to the floating gate through a thin oxide grown on single crystal silicon.

REFERENCES:
patent: 4099196 (1978-07-01), Simko
patent: 4119995 (1978-10-01), Simko
patent: 4274012 (1981-06-01), Simko
patent: 4300212 (1981-11-01), Simko

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