Electrically alterable read-mostly memory

Details Electrically alterable read-mostly memory Electrically alterable read-mostly memory

1979-02-16

1981-05-05

Fears, Terrell W.

Static information storage and retrieval

Read only systems

Semiconductive

365182, 357 23, 3072383, B11C 1140

Patent

active

042662834

ABSTRACT:
An electrically alterable read-mostly MOS memory (commonly referred to as E.sup.2 PROM) employing floating gate memory devices is described. Each word stored in memory may be separately accessed for reading and writing. The memory array is arranged with additional lines and selection means to prevent the high-level programming signals from the X-decoders from programming all the floating gate devices along a selected X-line. A high voltage circuit is described which permits the handling of potentials greater than the grounded gate breakdown voltage associated with the shallow junction devices used in the memory. A unique sensing amplifier is also disclosed which detects low currents at high speeds.

REFERENCES:
patent: 3825946 (1974-07-01), Frohman-Bentchkowsky
patent: 4119995 (1978-10-01), Simko

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