Electrically alterable, nonvolatile, floating gate type memory d

Details Electrically alterable, nonvolatile, floating gate type memory d Electrically alterable, nonvolatile, floating gate type memory d

1990-06-01

1992-01-14

Kunemund, Robert

Fishing, trapping, and vermin destroying

437984, 148DIG109, H01L 29788, H01L 21336

Patent

active

050810570

ABSTRACT:
The tunnelling area of a EEPROM memory device of the FLOTOX type is efficiently reduced in respect to the minimum areas obtained by means of current fabrication technologies, by forming the injection zone for the transfer of the electric charges by tunnel effect to and from the floating gate through an original self-aligned process, which allows limiting the dimensions of such a tunnelling area independently from the resolution limits of the available photolithographic technology.

REFERENCES:
patent: 4132904 (1979-01-01), Harari
patent: 4409723 (1983-10-01), Harari
patent: 4701776 (1987-10-01), Perlegos et al.
patent: 4754320 (1988-06-01), Mirzarni et al.
patent: 4814286 (1989-03-01), Tam

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