Electrically alterable, nonvolatile floating gate memory device

Details Electrically alterable, nonvolatile floating gate memory device Electrically alterable, nonvolatile floating gate memory device

1987-05-27

1989-04-18

Sikes, William L.

Static information storage and retrieval

Magnetic bubbles

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365185, H01L 2978

Patent

active

048231754

ABSTRACT:
Disclosed is an electrically alterable, floating gate type, nonvolatile, semiconductor memory device wherein the gate oxide layer in the "injection" area between the silicon (drain region of the device) and the floating gate has an increased thickness with respect to the thickness of the same gate oxide layer over the channel region of the device in order to decrease the parasitic capacitance of the injection area, thus improving the programming threshold voltage characteristics. A method for fabricating the improved memory device is also disclosed.

REFERENCES:
patent: 4442447 (1984-04-01), Ipri
patent: 4590504 (1986-05-01), Guterman
patent: 4622737 (1986-11-01), Ravaglia

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