Electrically alterable, nonvolatile floating gate memory device

Details Electrically alterable, nonvolatile floating gate memory device Electrically alterable, nonvolatile floating gate memory device

1983-03-07

1983-11-22

Munson, Gene M.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 59, 365185, H01L 2978, H01L 2702, H01L 2904, G11C 1140

Patent

active

044172648

ABSTRACT:
A novel, nonvolatile floating gate memory structure is described wherein the floating gate is substantially shielded from the substrate by the control gate. The control gate is provided with a pair of apertures, through which portions of the floating gate extends. One aperture serves as means for "writing" and "erasing" while the other aperture serves as means for "reading".

REFERENCES:
patent: 3500142 (1970-03-01), Kahng
patent: 3825946 (1974-07-01), Frohman-Bentchkowsky
patent: 4099196 (1978-07-01), Simko
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky
patent: 4328565 (1982-05-01), Harari
patent: 4336603 (1982-06-01), Kotecha et al.
"16-K EE-PROM relies on tunneling for byte-eraseable program storage", W. S. Johnson et al., Electronics, Feb. 28, 1980, pp. 113-117.

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