Electrically alterable nonvolatile floating gate memory device

Details Electrically alterable nonvolatile floating gate memory device Electrically alterable nonvolatile floating gate memory device

1983-03-07

1984-04-10

Munson, Gene M.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 23, 365185, H01L 2702, H01L 2978, G11C 1140

Patent

active

044424477

ABSTRACT:
An electrically alterable, nonvolatile floating gate memory device is described having enhanced write efficiency by reason of an extension of the floating gate member. The extension is made to extend over the drain line of an adjacent memory device and serves to provide the floating gate member with additional capacitance during the write operation thereby permitting a higher write efficiency for a given voltage.

REFERENCES:
patent: 3500142 (1970-03-01), Kahng
patent: 4019197 (1977-04-01), Lohstroh et al.
patent: 4115914 (1978-09-01), Harari
patent: 4122544 (1978-10-01), McElroy
patent: 4251829 (1981-02-01), Adam
patent: 4328565 (1982-05-01), Harari
patent: 4375087 (1983-02-01), Wanlass
"16-K EE-PROM Relies on Tunneling for Byte--Eraseable Program Storage" W. S. Johnson et al., Electronics, Feb. 28, 1980, pp. 113-117.

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