Electrically alterable, nonvolatile floating gate memory device

Details Electrically alterable, nonvolatile floating gate memory device Electrically alterable, nonvolatile floating gate memory device

1984-05-07

1985-12-10

Munson, Gene M.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 59, 365185, H01L 2978, H01L 2702, H01L 2904, G11C 1140

Patent

active

045583390

ABSTRACT:
A novel, nonvolatile, floating gate memory structure, and a method for its fabrication, is described wherein the floating gate is substantially shielded from the substrate by the program or control gate. The program or control gate is provided with an aperture located over an auxiliary channel region. A portion of the floating gate is formed to extend through the aperture to allow charge to be played on the floating gate.

REFERENCES:
patent: 3500142 (1970-03-01), Kahng
patent: 3660819 (1972-05-01), Frohman-Bentchkowsky
patent: 3825946 (1974-07-01), Frohman-Bentchkowsky
patent: 4099196 (1978-07-01), Simko
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky
patent: 4336603 (1982-06-01), Kotecha et al.
patent: 4355375 (1982-10-01), Arakawa
patent: 4417264 (1983-11-01), Angle
Hortuchi et al., "FCAT--A Low-Voltage High-Speed Alterable N-Channel Nonvolatile Memory Device", IEEE Trans. Electron Devices, vol. ED-26 (6/79) pp. 914-918.
Gerber et al, "A 1.5 V Single-Supply One-Transistor CMOS EEPROM", IEEE J. Solid-State Circuits, vol. SC-16 (6/81) pp. 195-200.
"16-K EE-PROM Relies on Tunneling for Byte-Erasable Program Storage", W. S. Johnson, Electronics, 2-28-1980, pp. 113-117.
"Electacally Alterable Programmable Logic Array (EALPA)", Hsieh et al, Tecw Dig IEDM, Wash. D.C., pp. 598-601, 12/8/80.

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