Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-02-21
2006-02-21
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185290
Reexamination Certificate
active
07002847
ABSTRACT:
An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cell to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states.
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Inoue Kiyoshi
Katayama Kunihiro
Tamura Takayuki
Antonelli Terry, Stout and Kraus, LLP
Le Thong Q.
Renesas Technology Corp.
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