Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-07-11
2006-07-11
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030
Reexamination Certificate
active
07075825
ABSTRACT:
An electrically alterable, non-volatile memory cell has more than two memory states that can be programmed selectively. Programming of the cell can be performed without actually reading the memory state of the cell during the programming operation. A plurality of the memory cells are preferably arranged in a matrix of rows and columns disposed substantially in a rectangle, with a plurality of word lines coupled with memory gate electrodes intersecting a first side of the rectangle substantially perpendicularly, a plurality of bit lines coupled with memory drain-source current paths intersecting a second side of the rectangle substantially perpendicularly (the second side also substantially perpendicularly intersecting the first side), a row select circuit being disposed at the first side for coupling with the word lines, and peripheral circuitry including a column select circuit and a sense circuit being disposed at the second side.
REFERENCES:
patent: 3660819 (1972-05-01), Frohman-Bentchkowsky
patent: 3755721 (1973-08-01), Frohman-Bentchkowksky
patent: 3801965 (1974-04-01), Keller et al.
patent: 4004159 (1977-01-01), Rai et al.
patent: 4054864 (1977-10-01), Audaire et al.
patent: 4090258 (1978-05-01), Cricchi
patent: 4122541 (1978-10-01), Uchida
patent: 4139910 (1979-02-01), Anantha et al.
patent: 4149270 (1979-04-01), Cricchi et al.
patent: 4181980 (1980-01-01), McCoy
patent: 4192014 (1980-03-01), Craycraft
patent: 4272830 (1981-06-01), Moench
patent: 4287570 (1981-09-01), Stark
patent: 4300210 (1981-11-01), Chakravarti et al.
patent: 4306300 (1981-12-01), Terman et al.
patent: 4327424 (1982-04-01), Wu
patent: 4357685 (1982-11-01), Daniele et al.
patent: 4388702 (1983-06-01), Sheppard
patent: 4415992 (1983-11-01), Adlhoch
patent: 4417325 (1983-11-01), Harari
patent: 4448400 (1984-05-01), Harari
patent: 4449203 (1984-05-01), Adlhoch
patent: 4462088 (1984-07-01), Giuliani et al.
patent: 4495602 (1985-01-01), Sheppard
patent: 4503518 (1985-03-01), Iwahashi
patent: 4558241 (1985-12-01), Suzuki et al.
patent: 4578777 (1986-03-01), Fang et al.
patent: 4586163 (1986-04-01), Koike
patent: 4612629 (1986-09-01), Harari
patent: 4627027 (1986-12-01), Rai et al.
patent: 4653023 (1987-03-01), Suzuki et al.
patent: RE32401 (1987-04-01), Belistein, Jr. et al.
patent: 4661929 (1987-04-01), Aoki et al.
patent: 4701884 (1987-10-01), Aoki et al.
patent: 4709350 (1987-11-01), Nakagome et al.
patent: 4733394 (1988-03-01), Giebel
patent: 4771404 (1988-09-01), Mano et al.
patent: 4799195 (1989-01-01), Iwahashi et al.
patent: 4809224 (1989-02-01), Suzuki et al.
patent: 4847808 (1989-07-01), Kobatake
patent: 4853892 (1989-08-01), Hori
patent: 4890259 (1989-12-01), Simko
patent: 4903236 (1990-02-01), Nakayama et al.
patent: 4914631 (1990-04-01), Johnson et al.
patent: 4964079 (1990-10-01), Devin
patent: 4989179 (1991-01-01), Simko
patent: 5014242 (1991-05-01), Akimoto et al.
patent: 5021999 (1991-06-01), Kohda et al.
patent: 5043940 (1991-08-01), Harari
patent: 5095344 (1992-03-01), Harari
patent: 5163021 (1992-11-01), Mehrotra et al.
patent: 5168465 (1992-12-01), Harari
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5198380 (1993-03-01), Harari
patent: 5200920 (1993-04-01), Norman et al.
patent: 5200959 (1993-04-01), Gross et al.
patent: 5258958 (1993-11-01), Iwahashi et al.
patent: 5262984 (1993-11-01), Noguchi et al.
patent: 5268318 (1993-12-01), Harari
patent: 5268319 (1993-12-01), Harari
patent: 5268870 (1993-12-01), Harari
patent: 5272669 (1993-12-01), Samachisa et al.
patent: 5293560 (1994-03-01), Harari
patent: 5295255 (1994-03-01), Malecek et al.
patent: 5321655 (1994-06-01), Iwahashi et al.
patent: 5351210 (1994-09-01), Saito
patent: 5394362 (1995-02-01), Banks
patent: 5422845 (1995-06-01), Ong
patent: 5432735 (1995-07-01), Parks et al.
patent: 5434825 (1995-07-01), Harari
patent: 5440505 (1995-08-01), Fazio et al.
patent: 5444656 (1995-08-01), Bauer et al.
patent: 5450363 (1995-09-01), Christopherson et al.
patent: 5457650 (1995-10-01), Sugiura et al.
patent: 5469384 (1995-11-01), Lacey
patent: 5475693 (1995-12-01), Christopherson et al.
patent: 5485422 (1996-01-01), Bauer et al.
patent: 5497119 (1996-03-01), Tedrow et al.
patent: 5506813 (1996-04-01), Mochizuki et al.
patent: 5508958 (1996-04-01), Fazio et al.
patent: 5515317 (1996-05-01), Wells et al.
patent: 5523972 (1996-06-01), Rashid et al.
patent: 5539690 (1996-07-01), Talreja et al.
patent: 5541886 (1996-07-01), Hasbun
patent: 5544118 (1996-08-01), Harari
patent: 5550772 (1996-08-01), Gill
patent: 5554553 (1996-09-01), Harari
patent: 5568439 (1996-10-01), Harari
patent: 5583812 (1996-12-01), Harari
patent: 5594691 (1997-01-01), Bashir
patent: 5596527 (1997-01-01), Tomioka et al.
patent: 5642312 (1997-06-01), Harari
patent: 5712819 (1998-01-01), Harari
patent: 5764571 (1998-06-01), Banks
patent: 5768184 (1998-06-01), Hayashi et al.
patent: 5872735 (1999-02-01), Banks
patent: 6002614 (1999-12-01), Banks
patent: 6011716 (2000-01-01), Banks
patent: 6014327 (2000-01-01), Banks
patent: 6104640 (2000-08-01), Banks
patent: 6118692 (2000-09-01), Banks
patent: 6243321 (2001-06-01), Banks
patent: 6246613 (2001-06-01), Banks
patent: 6324121 (2001-11-01), Banks
patent: 6327189 (2001-12-01), Banks
patent: 6339545 (2002-01-01), Banks
patent: 6343034 (2002-01-01), Banks
patent: 6344998 (2002-02-01), Banks
patent: 6353554 (2002-03-01), Banks
patent: 6356486 (2002-03-01), Banks
patent: 6381172 (2002-04-01), Banks
patent: 6404675 (2002-06-01), Banks
patent: 6434050 (2002-08-01), Banks
patent: 2003/0202378 (2003-10-01), Banks
patent: 0 390 404 (1990-10-01), None
patent: 2 630 574 (1989-10-01), None
patent: 56-114199 (1981-09-01), None
patent: 59-63095 (1984-04-01), None
patent: 61-239497 (1986-10-01), None
patent: 61-239498 (1986-10-01), None
patent: 62-6493 (1987-01-01), None
patent: 62-24499 (1987-02-01), None
patent: 1-159895 (1989-06-01), None
patent: 2-227900 (1990-09-01), None
patent: 3-242898 (1991-10-01), None
patent: 4-507320 (1992-12-01), None
patent: 5-217385 (1993-08-01), None
patent: 5-282881 (1993-10-01), None
patent: 6-68682 (1994-03-01), None
patent: 7-029383 (1995-01-01), None
patent: 7-161852 (1995-06-01), None
patent: 8-195092 (1996-07-01), None
patent: 8-274282 (1996-10-01), None
patent: 9-181279 (1997-07-01), None
patent: WO82/02276 (1982-07-01), None
patent: WO82/02976 (1982-09-01), None
patent: WO90/01984 (1990-03-01), None
M. Bauer et al.,A Multilevel-Cell 32Mb Flash Memory, 1995 IEEE International Solid-State Circuits Conference, Session 7, Paper TA7.7.
John A. Bayliss et al.,The Interface Processor for the 32b Computer, 1981 IEEE International Solid-State Circuits Conference, Feb. 1981, at 116-117.
Christoph Bleiker & Hans Melchior,A Four-State EEPROM Using Floating-Gate Memory Cells, IEEE Journal of Solid-State Circuits, vol. SC-22, No. 3, Jun. 1987, at 260-263.
Raymond A. Heald & David A. Hodges,Multilevel Random-Access Memory Using One Transistor Per Cell, IEEE Journal of Solid-State Circuits, vol. SC-11, No. 4, Aug. 1976, at 519-528.
David A. Rich,A Survey of Multivalued Memories, IEEE Transactions on Computers, vol. C-35, No. 2, Feb. 1986, at 99-106.
R.S. Withers et al.,Nonvolatile Analog Memory in MNOS Capacitors, IEEE Electron Device Letters, vol. EDL-1, No. 3, Mar. 1980, at 42-45.
Intel Corporation. “2764A Advanced 64K (8K×8) Production and UV Erasable PROMs.” Memory Components Handbook. (Oct. 1985): 4.10-4.20.
Alberts, G.S., and Kotecha, H.N. “Multi-Bit Storage FET EAROM Cell.” IBM Technical Disclosure Bulletin, vol. 24, No. 7A. (Dec. 1981): 3311-3314.
Blyth, Trevor, et al. “TPM 11.7: A Non-Volatile Analog Storage Device Using EEPROM Technology.” 1991 IEEE International Solid-State Circuits Conference, Digest of Technical Papers. (Feb. 1991): 192-193 and 315.
Donoghue, Bill, et al. “A 256K HCMOS ROM Using a Four-State Cell Approach.” IEEE Journal of Solid-State Circuits, vol. SC-20, No. 2. (Apr. 1985): 598-602.
“Mid-Level Current Generator Circuit”, IBM Technical Disclosure Bulletin, vol. 33, No. 1B, Jun. 1, 1990, pp. 386-388.
BTG International Inc.
Le Vu A.
Miles & Stockbridge P.C.
LandOfFree
Electrically alterable non-volatile memory with n-bits per cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrically alterable non-volatile memory with n-bits per cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically alterable non-volatile memory with n-bits per cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3599588