Electrically alterable non-volatile memory device

Details Electrically alterable non-volatile memory device Electrically alterable non-volatile memory device

1986-01-03

1988-10-25

Clawson, Jr., Joseph E.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 236, 357 12, 357 41, 357 54, 365185, H01L 2978

Patent

active

047807504

ABSTRACT:
In this invention, an Electrically Alterable Non-Volatile Memory (EANOM) cell is disclosed. The EANOM ceil comprises an MOS transistor, having a source, a gate and a drain. The EANOM cell also has a two-terminal tunnel device, one end of which is connected to the gate of the MOS transistor. The other terminal being labelled "T". The tunnel device causes charges to be stored or removed from the gate of the MOS transistor. In a preferred embodiment, a four-terminal EANOM cell is disclosed. The four terminals of the EANOM cell are terminals T, S (source of the MOS transistor), D (drain of the MOS transistor) and a terminal C which is capacitively coupled to the gate of the MOS transistor. The EANOM cell can be used in a memory circuit to increase the reliability thereof. Two or more EANOM cells are connected in tandem and operate simultaneously. Catastrophic failure of one EANOM cell results in an open circuit with the other EANOM cell continuing to function.

REFERENCES:
patent: 4477825 (1984-10-01), Yaron et al.
patent: 4477883 (1984-10-01), Wada
patent: 4513397 (1985-04-01), Ipri et al.
patent: 4527255 (1985-07-01), Kestboe
patent: 4527259 (1985-07-01), Watanabe
patent: 4571704 (1986-02-01), Bohac
patent: 4571705 (1986-02-01), Wada
patent: 4611309 (1986-09-01), Chuang et al.
patent: 4685083 (1987-08-01), Leuschner

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