Electrically alterable double dense memory

Details Electrically alterable double dense memory Electrically alterable double dense memory

1980-10-27

1983-04-12

Hecker, Stuart N.

Static information storage and retrieval

Floating gate

Particular biasing

357 23, G11C 1140

Patent

active

043800572

ABSTRACT:
An electrically alterable double dense memory is provided which includes a field effect transistor having first and second spaced apart diffusion regions of a first conductivity defining a channel region at the surface of a semiconductor substrate having a second conductivity. First and second floating gates are disposed over the first and second diffusion regions, respectively, and each extends over an end of the channel region. First and second dual charge injector structures or enhanced conduction insulators are disposed between the first and second floating gates and a common control gate of the transistor. A word line is connected to the control gate and first and second bit lines are connected to the first and second diffusion regions. By applying appropriate pulses to the word and bit lines, a selected floating gate can be charged to alter the conductivity of the end of the channel region associated with the selected floating gate and then discharged at will. In this manner binary digits of information are stored in each of the two floating gates and altered as desired. By applying appropriate voltages to the control gate and to one of the first and second diffusion regions, the stored information or charge condition of the floating gate associated with the other of the first and second diffusion regions can be determined.

REFERENCES:
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Electronics, Feb. 15, 1971, pp. 99-104, T. P. Cauge et al., "Double-Diffused MOS Transistor Achieves Microwave Gain".
Journal of Applied Physics, 51(5), May 1980, pp. 2722-2735 by D. J. DiMaria et al., "High Current Injection into SiO.sub.2 from Si Rich SiO.sub.2 films . . . ".
IEEE Electron Device Letters, vol. EDL-1, No. 9, Sep. 1980 by D. J. DiMaria et al., "Electrically-Alterable Memory Using a Dual Electron . . . ".

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