Electrically alterable antifuse using FET

Details Electrically alterable antifuse using FET Electrically alterable antifuse using FET

1998-04-24

2000-10-10

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257529, 257 50, 257665, 257173, H01L 2900, H01L 2904, H01L 2974, H01L 2358

Patent

active

061304697

ABSTRACT:
An integrated circuit and fabrication method for an antifuse structure that includes a shallow trench oxide isolation region disposed in a silicon substrate, the oxide in the trench having a top surface recessed below the surface of the substrate to form sharp corners at each side of the trench. The substrate includes diffusion regions adjacent to the sharp corners, electrical insulation layers over the diffusion regions, and an electrical conductor is disposed over the recessed oxide in the trench. When voltage is applied on the electrical conductor, a high field point is produced at the sharp corners causing the electrical insulation layer at the corners to break down and create a short circuit between the electrical conductor and the diffusions, thus providing a fuse function.

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patent: 5780919 (1998-07-01), Chua et al.
patent: 5866937 (1999-02-01), McCollum
patent: 5962911 (1999-10-01), Manley
patent: 5988835 (1999-12-01), Furukawa et al.

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