Electrical test structure and method for characterization of...

Details Electrical test structure and method for characterization of... Electrical test structure and method for characterization of...

2011-06-14

2011-06-14

Nguyen, Ha Tran T (Department: 2858)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

Reexamination Certificate

active

07960998

ABSTRACT:
A test structure and testing method are provided for characterizing the time-dependent drift in the parasitic PFET leakage current that flows along the sidewall of a deep trench isolation structure from the P-type active area to the P-type substrate in a semiconductor integrated circuit structure. The capacitive coupling characteristics of the deep trench isolation structure are used to control the electrical “bias” of the deep trench structure through the use of a large auxiliary trench mesh network that is formed as part of the deep trench structure. The trench mesh network can be placed adjacent to a Vdd ring or a ground ring and then, by using a ratioed capacitive voltage dividing network, the electrical potential at the trench can be controlled.

REFERENCES:
patent: 6137152 (2000-10-01), Wu
patent: 6365952 (2002-04-01), Akram
patent: 7298159 (2007-11-01), Rozario et al.
patent: 7348596 (2008-03-01), Lin
patent: 2005/0064678 (2005-03-01), Dudek et al.

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