Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2011-01-18
2011-01-18
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C438S105000
Reexamination Certificate
active
07872265
ABSTRACT:
An electrical device according to one embodiment includes a substrate including at least one diamond layer; at least one first electrode in contact with said substrate, wherein at least one said first electrode includes at least one electrically conductive protrusion extending into said substrate; and at least one second electrode in contact with said substrate and spaced from the or each said first electrode.
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Evince Technology Limited
Lee Calvin
Zilka-Kotab, PC
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