Electrical stress protection apparatus and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown

Reexamination Certificate

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C257S494000, C257SE29012, C257SE29013

Reexamination Certificate

active

07656003

ABSTRACT:
In various embodiments, circuits and semiconductor devices and structures and methods to manufacture these structures and devices are disclosed. In one embodiment, a bidirectional polarity, voltage transient protection device is disclosed. The voltage transient protection device may include a bipolar PNP transistor having a turn-on voltage of VBE1, a bipolar NPN transistor having a turn-on voltage of VBE2, and a field effect transistor (FET) having a threshold voltage of VTH, wherein a turn-on voltage VTOof the voltage transient protection device is approximately equal to the sum of VBE1, VBE2, and VTH, that is, VTO≅VBE1+VBE2+VTH. Other embodiments are described and claimed.

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