Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown
Reexamination Certificate
2006-08-25
2010-02-02
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With means to prevent edge breakdown
C257S494000, C257SE29012, C257SE29013
Reexamination Certificate
active
07656003
ABSTRACT:
In various embodiments, circuits and semiconductor devices and structures and methods to manufacture these structures and devices are disclosed. In one embodiment, a bidirectional polarity, voltage transient protection device is disclosed. The voltage transient protection device may include a bipolar PNP transistor having a turn-on voltage of VBE1, a bipolar NPN transistor having a turn-on voltage of VBE2, and a field effect transistor (FET) having a threshold voltage of VTH, wherein a turn-on voltage VTOof the voltage transient protection device is approximately equal to the sum of VBE1, VBE2, and VTH, that is, VTO≅VBE1+VBE2+VTH. Other embodiments are described and claimed.
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Cool Kenneth J.
Cool Patent P.C.
Huber Robert
HVVi Semiconductors, Inc
Malsawma Lex
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