Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1997-08-08
1999-08-24
Pascal, Robert
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330302, 330306, H03F 316
Patent
active
059429437
ABSTRACT:
There is provided an electrical power amplifier device in which an output voltage amplitude is increased without generating any problems such as a reduction of gain, an increasing of loss and providing a large-sized device. The electrical amplifier device of the present invention is operated such that a bias point and a gradient of a load line are set as follows. That is, in the electrical power amplifier device of the present invention, a bias point of a source-grounded field-effect transistor is set to a point where a drain bias current is higher than that of the class A bias point. In addition, in the electrical power amplifier device of the present invention, a gradient of a load line is set to have a relation of a first voltage V.sub.1 >a second voltage V.sub.2. In this case, the first voltage V.sub.1 is a voltage obtained by subtracting a power supply voltage V.sub.dd from a voltage attained at a crossing point between the load line and the voltage axis. In addition, the second voltage V.sub.2 is a voltage obtained by subtracting a knee voltage V.sub.knee from the power supply voltage V.sub.dd. Further, an input voltage where an output voltage wave is saturated at a low voltage side is applied to the electrical power amplifier device of the present invention to operate it.
REFERENCES:
patent: 4107621 (1978-08-01), Furutani et al.
patent: 5117203 (1992-05-01), Tennyson
patent: 5229732 (1993-07-01), Furutani et al.
patent: 5272456 (1993-12-01), Ishida
NEC Corporation
Nguyen Khanh Van
Pascal Robert
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