Electrical organic thin film switching device switching between

Compositions – Radioactive compositions – Nuclear reactor fuel

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252 623Q, 357 1, 357 2, H01L 2928

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active

046528946

ABSTRACT:
A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between netallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provide switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.

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patent: 3687987 (1972-08-01), Martin
Kamitsos et al, Solid State Communications, vol. 45, No. 2, 1983, pp. 165-169.
Melby et al, J. American Chemistry, vol. 84, pp. 3374-3387, 1962.
Kevorkian et al, Discussions of Faraday Society, No. 51, 1971, pp. 139-142.

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