Electrical multilayer contact for microelectronic structure

Details Electrical multilayer contact for microelectronic structure Electrical multilayer contact for microelectronic structure

1989-07-19

1990-12-25

James, Andrew J.

Fishing, trapping, and vermin destroying

357 71, 437189, H01L 2348

Patent

active

049807510

ABSTRACT:
An electrical contact between two film members that is stable over all conditions encountered in processing and over the device lifetime. The contact has a central multi-element diffusion barrier alloy layer having at least one elemental ingredient that does not react with either film member and at least one other elemental ingredient that reacts with the adjacent film member to form an intermediate layer between the diffusion barrier layer and each film member. A contact between aluminum wiring and silicon devices on an integrated circuit chip is provided with a diffusion barrier layer of for example, WPd with an intermediate layer on both sides, one side being PdSi next to the silicon and the other being AlPd.sub.3 next to the aluminum.

REFERENCES:
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