Electrical measurements of the profile of semiconductor devices

Details Electrical measurements of the profile of semiconductor devices Electrical measurements of the profile of semiconductor devices

1990-05-17

1990-12-18

Eisenzopf, Reinhard J.

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

324699, 324716, 324158R, 437 8, G01R 2702, G01R 3126

Patent

active

049789236

ABSTRACT:
A method for measuring the width and profile of structures in a semiconductor wafer comprises the step of constructing test structures on the wafer shaped to function as moats for confining electrically conductive liquid. The moats have an elongated shape. By measuring the electrical resistance exhibited by the liquid within the moat, the dimensions of the moat and, thus, the other structures on the wafer can be measured. In an alternative embodiment, the conductive liquid is used to facilitate electrical contact to the various structures formed in the wafer.

REFERENCES:
patent: 3974443 (1976-08-01), Thomas
patent: 4101830 (1978-07-01), Greig
patent: 4103228 (1978-07-01), Ham
patent: 4218649 (1980-08-01), Kutzavitch
patent: 4473795 (1984-09-01), Wood

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