Electrical isolation method for devices made on SOI wafer

Details Electrical isolation method for devices made on SOI wafer Electrical isolation method for devices made on SOI wafer

1995-07-18

1996-05-21

Dang, Trung

Fishing, trapping, and vermin destroying

437 35, 437 40, 437 41, 148DIG150, H04L 2176

Patent

active

055189490

ABSTRACT:
The present invention is related to an isolation method for SOI (Silicon on Insulator) devices on an SOI wafer having a silicon substrate, a buried dielectric layer formed on the silicon substrate and a silicon film layer formed on the buried dielectric layer. The method includes steps of: a) growing a first oxide layer on the SOI wafer; b) depositing a silicon nitride layer on the first oxide layer; c) defining a photoresist pattern on the resulting product to sere as a mask; d) etching portions of the silicon nitride layer, the first oxide layer and the silicon film layer according to the photoresist mask to obtain a silicon-film island region; e) laterally etching the silicon nitride layer above the silicon-film island region with an isotropic nitride etchant to cause a horizontal recess between the photoresist mask and the first oxide layer; f) removing the photoresist mask; g) growing a second oxide layer over side walls of the silicon-film island region to passirate defects over the side walls; h) proceeding a lapse angle ion-implantation to the side walls of the silicon-film island region; i) depositing a third oxide layer on the resulting product; j) etching back the third oxide layer to have the silicon nitride layer above the silicon-film island region exposed and to form oxide side-wall spacers against the side walls of the silicon-film island region; k) removing the silicon nitride layer; and l) etching the first oxide layer on the silicon-film island region and the top potions of the oxide side-wall spacers smoothened simultaneously.

REFERENCES:
patent: 4753896 (1988-06-01), Matloubian
patent: 4755481 (1988-07-01), Faraone
patent: 4950618 (1990-08-01), Sundaresan et al.
patent: 5034789 (1991-07-01), Black
patent: 5346839 (1994-09-01), Sundaresan

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