Electrical interconnections for semi-conductor devices

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357 24, 357 65, 357 68, 357 30, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

040127672

ABSTRACT:
In a semiconductor device low impedance ohmic connection is provided between a first conductor constituted of a metallic oxide material and a second conductor constituted of aluminum by the inclusion between the two conductors of a conductive interface member making low impedance ohmic contact to each of the first and second conductors.

REFERENCES:
patent: 3770988 (1973-11-01), Engeler et al.
patent: 3795847 (1974-03-01), Engeler et al.
patent: 3877049 (1975-04-01), Buckley
patent: 3946426 (1976-03-01), Sanders

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