Electrical interconnection for semiconductor integrated circuits

Details Electrical interconnection for semiconductor integrated circuits Electrical interconnection for semiconductor integrated circuits

1984-10-09

1986-09-16

O'Keefe, Veronica

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428650, 428651, 428660, 428663, 428665, 357 71R, H01L 21285, H01L 2130

Patent

active

046122575

ABSTRACT:
A structure for an electrical interconnection suitable for a semiconductor integrated circuit is made by a process utilizing selective tungsten deposition at low pressure to form an intermediate conductive layer without significantly ablating nearby insulating material.

REFERENCES:
patent: 3729406 (1973-04-01), Osborne et al.
patent: 3826626 (1974-07-01), Bhatt et al.
patent: 4267012 (1981-05-01), Pierce
patent: 4404235 (1983-09-01), Tarng
Shaw et al. Vapor Deposited Tungsten for Silicon Devices, Solid State Technology, pp. 53-57, Dec. 1, 1971.
Miller et al., Hot-Wall CVD Tungsten for VSLI, Solid State Technology, pp. 79-82, Dec. 1, 1980.

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