Electrical interconnect with minimal parasitic capacitance

Details Electrical interconnect with minimal parasitic capacitance Electrical interconnect with minimal parasitic capacitance

2006-08-29

2006-08-29

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S737000, C257S778000

Reexamination Certificate

active

07098540

ABSTRACT:
The invention discloses an electrical interconnect with minimal parasitic capacitance. In one embodiment, an apparatus comprises a semiconductor substrate, and first and second support structures formed on the substrate, where the second support structure at least partially surrounds the first support structure on the substrate. The first and second support structures are each configured to support an electrical connector to be formed over the first and second support structures on the substrate.

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