Electrical insulating, sintered aluminum nitride body having a h

Details Electrical insulating, sintered aluminum nitride body having a h Electrical insulating, sintered aluminum nitride body having a h

1987-08-11

1989-01-03

LaRoche, Eugene R.

Compositions: ceramic

Ceramic compositions

Glass compositions, compositions containing glass other than...

357 80, 357 81, 357 74, 501 88, 501 89, 501 90, 264 65, H01L 2348, H01L 2962, C04B 3552, F27B 910

Patent

active

047960779

ABSTRACT:
The present invention provides a highly thermal conductive, electrical insulating ceramic body having at least 90% of theoretical density and comprising 20 to 40% by weight of silicon carbide, the balance being substantially aluminum nitride, the silicon carbide containing not more than 0.1 by weight of sum total of boron, aluminum and nitrogen and not more than 0.2% by weight of sum total of iron, titanium, vanadium, chromium and nickel, and the aluminum nitride containing not more than 1% by weight of oxygen and not more than 0.5% by weight of sum total of silicon, iron and magnesium, the sintered body having a thermal conductivity at 20.degree. C. of at least 250 W/m..degree.K, an electrical resistivity at 20.degree. C. of at least 10.sup.10 .OMEGA.. cm, a dielectric strength at 20.degree. C. of at least 20 kV/cm, a dielectric constant at 1 MHz of not more than 10, a bending strength at 20.degree. C. of at least 400 MPa and a fracture toughness at 20.degree. C. of at least 5MN/m.sup.3/2. The present sintered body can be used as a substrate for a semi-conductor device, and a semi-conductor device using the present sintered body has good heat radiation.
The present sintered body can be used as a substrate for a semi-conductor device, and a semi-conductor device using the present sintered body has a good heat radiation characteristic.

REFERENCES:
patent: 4517584 (1985-05-01), Matsushita et al.
patent: 4569922 (1986-02-01), Suzuki
patent: 4571610 (1986-02-01), Matsushita et al.
patent: 4651192 (1987-03-01), Matsushita et al.
patent: 4687657 (1987-08-01), Clark et al.
patent: 4698663 (1987-10-01), Sugimoto et al.
Bentsen et al., "Effect of Hot-Pressing Temperature of the Thermal Diffusivity/Conductivity of SiC/Aln Composites", Communications of the American Ceramic Society, Mar. 1983, pp. C-40 to C-41.

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