Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-03-07
2010-06-08
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S530000, C257SE23147, C257SE23149, C257S537000, C257S538000, C257S209000
Reexamination Certificate
active
07732893
ABSTRACT:
The present invention provides an electrical fuse structure for achieving a post-programming resistance distribution with higher resistance values and to enhance the reliability of electrical fuse programming. A partly doped electrical fuse structure with undoped semiconductor material in the cathode combined with P-doped semiconductor material in the fuselink and anode is disclosed and the data supporting the superior performance of the disclosed electrical fuse is shown.
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C. Kothandaraman et al., “Electrically Programmable Fuse (eFUSE) Using Electromigration in Silicides”, IEEE Electron Device Letters, vol. 23, No. 9, Sep. 2002, pp. 523-525.
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Iyer Subramanian S.
Kim Deok-Kee
Kothandaraman Chandrasekharan
Park Byeongju
Abate Esq. Joseph P.
Chen David Z
International Business Machines - Corporation
Jackson, Jr. Jerome
Scully , Scott, Murphy & Presser, P.C.
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