Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-10-26
2010-11-23
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE21536
Reexamination Certificate
active
07838963
ABSTRACT:
A contiguous block of a stack of two heterogeneous semiconductor layers is formed over an insulator region such as shallow trench isolation. A portion of the contiguous block is exposed to an etch, while another portion is masked during the etch. The etch removes an upper semiconductor layer selective to a lower semiconductor layer in the exposed portion. The etch mask is removed and the entirety of the lower semiconductor layer within the exposed region is metallized. A first metal semiconductor alloy vertically abutting the insulator region is formed, while exposed surfaces of the stack of two heterogeneous semiconductor layers, which comprises the materials of the upper semiconductor layer, are concurrently metallized to form a second metal semiconductor alloy. An inflection point for current and, consequently, a region of flux divergence are formed at the boundary of the two metal semiconductor alloys.
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Chidambarrao Dureseti
Henson William K.
Kim Deok-Kee
Kothandaraman Chandrasekharan
Abate Esq. Joseph P.
Dickey Thomas L
Erdem Fazli
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
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