Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-07-18
2010-11-02
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE23149
Reexamination Certificate
active
07825490
ABSTRACT:
An electrical fuse is formed on a semiconductor substrate and a first dielectric layer is formed over the electrical fuse. At least one opening is formed by lithographic methods and a reactive ion etch in the first dielectric layer down to a top surface of the electrical fuse or down to shallow trench isolation. A second dielectric layer is deposited by a non-conformal deposition. Thickness of the second dielectric layer on the sidewalls of the at least one opening increases with height so that at least one cavity encapsulated by the second dielectric layer is formed in the at least one opening. The at least one cavity provides enhanced thermal isolation of the electrical fuse since the cavity provides superior thermal isolation than a dielectric material.
REFERENCES:
patent: 5899736 (1999-05-01), Weigand et al.
patent: 6274440 (2001-08-01), Arndt et al.
patent: 2006/0256160 (2006-11-01), Ozaki et al.
patent: 2009/0026574 (2009-01-01), Kim et al.
Kim Deok-kee
Li Wai-Kin
Yang Haining S.
Ahmed Selim
Cai Yuanmin
International Business Machines - Corporation
Purvis Sue
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Electrical fuse having a cavity thereupon does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrical fuse having a cavity thereupon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrical fuse having a cavity thereupon will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4216846