Semiconductor device manufacturing: process – Direct application of electrical current – To alter conductivity of fuse or antifuse element
Reexamination Certificate
2010-09-14
2011-10-04
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Direct application of electrical current
To alter conductivity of fuse or antifuse element
C438S466000, C438S600000, C438S601000, C257S529000
Reexamination Certificate
active
08030181
ABSTRACT:
A fuse circuit is disclosed, which comprises at least one electrical fuse element having a resistance that changes after being stressed in an electromigration mode, a switching device serially coupled with the electrical fuse element in a predetermined path between a fuse programming power supply (VDDQ) and a low voltage power supply (GND) for selectively allowing a programming current passing through the electrical fuse element during a programming operation, and at least one peripheral circuit coupled to the VDDQ, wherein the peripheral circuit is active and draws current from the VDDQ during a fuse programming operation.
REFERENCES:
patent: 6018488 (2000-01-01), Mishima et al.
patent: 7821041 (2010-10-01), Chung et al.
patent: 2002/0075062 (2002-06-01), Kitade
Chung Shine
Hsu Fu-Chieh
Hsueh Fu-Lung
K&L Gates LLP
Pham Thanh V
Taiwan Semiconductor Manufacturing Co. Ltd.
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