Electrical fuse circuit for security applications

Details Electrical fuse circuit for security applications Electrical fuse circuit for security applications

2007-05-15

2010-10-26

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S529000, C257SE29001

Reexamination Certificate

active

07821041

ABSTRACT:
A fuse circuit is disclosed, which comprises at least one electrical fuse element having a resistance that changes after being stressed in an electromigration mode, a switching device serially coupled with the electrical fuse element in a predetermined path between a fuse programming power supply (VDDQ) and a low voltage power supply (GND) for selectively allowing a programming current passing through the electrical fuse element during a programming operation, and at least one peripheral circuit coupled to the VDDQ, wherein the peripheral circuit is active and draws current from the VDDQ during a fuse programming operation.

REFERENCES:
patent: 6330204 (2001-12-01), Miyagi
patent: 2002/0075062 (2002-06-01), Kitade
patent: 2005/0052892 (2005-03-01), Low et al.
Alavi, Mohsen et al., “A PROM Element Based on Salicide Agglomeration of Poly Fuses in a CMOS Logic Process”, IEEE IEDM, pp. 855-858 (1997).
Kalnitsky, Alexander et al., “CoSi2integrated fuses on poly silicon for low voltage 0.18 μm CMOS applications”, IEEE IEDM, pp. 765-768 (1999).
Kothandaraman, C., et al. “Electrically Programmable Fuse (eFUSE) Using Electromigration in Silicides”, IEEE Electron Device Letters, vol. 23, No. 9, pp. 523-525 (Sep. 2002).

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