Active solid-state devices (e.g. – transistors – solid-state diode – Contacts or leads including fusible link means or noise...
Reexamination Certificate
2007-02-02
2010-06-08
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Contacts or leads including fusible link means or noise...
C257S529000, C257SE23149
Reexamination Certificate
active
07732898
ABSTRACT:
A fuse link of undoped material is connected between first and second doped material contact regions and a layer of conductive material is located above the first and second contact regions and the fuse link. According to other embodiments, a fuse link is connected between first and second contact regions. A layer of conductive material is above the first and second contact regions and the fuse link, and a heat sink is in proximity to the fuse link. In a method, a programming pulse is applied to a fuse link of undoped material connected between first and second doped material contact regions to generate electromigration drift of a conductive material above the first and second contact regions and the fuse link.
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Ho Tu-Tu V
Infineon - Technologies AG
SpryIP, LLC
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