Electrical field enhanced electron image projector

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, H01J 37073

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active

049688944

ABSTRACT:
An electrical field-enhanced electron image projector (10) is exposed to an electrical field source (26) to induce the emission of electrons (20) which flow across a gap (28) from a pattern (14) of mask (12) to a photoresist layer (18) of a substrate (16). A heat source (22) can be applied to increase the flow of electrons (20) from the pattern (14) to the photoresist layer (18). As the gap (28) distance decreases, the ability of electrons (20) to move from the pattern (14) to the photoresist layer (18) increases.

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