Electrical erasable and programmable read-only memory and manufa

Details Electrical erasable and programmable read-only memory and manufa Electrical erasable and programmable read-only memory and manufa

1993-07-01

1994-10-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437 43, 437 48, 437228, 437233, 437235, H01L 2170

Patent

active

053547020

ABSTRACT:
A method for manufacturing an EEPROM comprises the step of using raw gas containing an organic compound having a molecular weight of more than 44, such as ethyl acetate and tetrahydrofuran when a first polysilicon layer serving as a select gate electrode and a second polysilicon layer serving as a floating gate electrode are deposited by a CVD process. The above described step allows a voltage at the time of tunneling electrons to be decreased.

REFERENCES:
patent: 4302766 (1981-11-01), Guterman
patent: 4612212 (1986-09-01), Masuoka
patent: 4988635 (1991-01-01), Ajika et al.

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