Electrical die contact structure and fabrication method

Details Electrical die contact structure and fabrication method Electrical die contact structure and fabrication method

2006-06-27

2006-06-27

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S460000, C438S462000

Reexamination Certificate

active

07067354

ABSTRACT:
A semiconductor device of the invention includes an integrated circuit formed on a semiconductor substrate having first and second surfaces and edges. The first surface includes electrical contact pads electrically connected with the integrated circuit. The first surface of the semiconductor substrate includes a top protective layer that has a surface portion extending beyond the edges of the semiconductor substrate. The surface portion of the top protective layer includes electrical contact pads that are electrically connected with electrical contact pad extensions and with the integrated circuit. The second surface of the semiconductor substrate includes a multiplicity of backside electrical connectors that are in overlapping electrical contact with corresponding electrical contact pad extensions forming lap joint electrical connections between the backside electrical connectors and the corresponding electrical contact pad extensions. Methods for constructing such devices and connections are also disclosed.

REFERENCES:
patent: 6040235 (2000-03-01), Badchi
patent: 6235612 (2001-05-01), Wang et al.
patent: 6236111 (2001-05-01), Legay et al.
patent: 6326689 (2001-12-01), Thomas
patent: 6781244 (2004-08-01), Prabhu
U.S. Appl. No. 10/145,295, filed May 13, 2002.

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