Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-09-20
2005-09-20
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000, C257S759000
Reexamination Certificate
active
06946736
ABSTRACT:
Provided is a process for lithographically patterning a material on a substrate comprising the steps of (a) depositing a radiation sensitive material on the substrate by chemical vapor deposition; (b) selectively exposing the radiation sensitive material to radiation to form a pattern; and (c) developing the pattern using a supercritical fluid (SCF) as a developer. Also disclosed is a microstructure formed by the foregoing process. Also disclosed is a process for lithographically patterning a material on a substrate wherein after steps (a) and (b) above, the pattern is developed using a dry plasma etch. Also disclosed is a microstructure comprising a substrate; and a patterned dielectric layer, wherein the patterned dielectric layer comprises at least one two-dimensional feature having a dimensional tolerance more precise than 7%. Also disclosed is a microelectronic structure comprising a substrate; a plurality of transistors formed on the substrate; and a plurality of conductive features formed within a dielectric pattern, wherein the plurality of conductive features include at least one two-dimensional feature having a dimensional tolerance more precise than 7%.
REFERENCES:
patent: 4288861 (1981-09-01), Swainson et al.
patent: 4297401 (1981-10-01), Chern et al.
patent: 4377437 (1983-03-01), Taylor et al.
patent: 4491628 (1985-01-01), Ito et al.
patent: 4801477 (1989-01-01), Fudim
patent: 4944837 (1990-07-01), Nishikawa
patent: 4975347 (1990-12-01), Ahne et al.
patent: 5071730 (1991-12-01), Allen et al.
patent: 5185296 (1993-02-01), Morita et al.
patent: 5439780 (1995-08-01), Joshi et al.
patent: 5589105 (1996-12-01), DeSimone et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5640255 (1997-06-01), Haines
patent: 5643474 (1997-07-01), Sangeeta
patent: 5665527 (1997-09-01), Allen et al.
patent: 5679737 (1997-10-01), DeSimone et al.
patent: 5707783 (1998-01-01), Stauffer et al.
patent: 5798965 (1998-08-01), Jun
patent: 5811357 (1998-09-01), Armacost et al.
patent: 5849809 (1998-12-01), Narang et al.
patent: 5888591 (1999-03-01), Gleason et al.
patent: 5893734 (1999-04-01), Jeng et al.
patent: 5910660 (1999-06-01), Hodel et al.
patent: 5937318 (1999-08-01), Warner, Jr. et al.
patent: 5977041 (1999-11-01), Honda
patent: 6013411 (2000-01-01), Aoai et al.
patent: 6014422 (2000-01-01), Boyd et al.
patent: 6020410 (2000-02-01), Hacker et al.
patent: 6121159 (2000-09-01), Pasch
patent: 6149828 (2000-11-01), Vaartstra
patent: 6245690 (2001-06-01), Yau et al.
patent: 2001/0001698 (2001-05-01), Grober et al.
Wolf et al., Silicon Processing for the VLSI Era, 2000, vol. I, Lattice Press, 719-724, 791-795.
Chiarello, Ron et al., “Multidisciplinary Approaches Target ES&H”,Semiconductor International, (1999), p. 62-66.
Gallagher-Wetmore, Supercritical Fluid Processing: A New Dry Technique for Photoresist Developing:, SPIE, Jun. 1995, pp. 694-708, vol. No. 2438.
Knickelbein, et al., “New Devices for the Production of Intense Pulsed Jets of CF2: Laser Spectroscopic Characterization”, Mat. Res. Soc. Symp. Proc., 1985, pp. 23-33, vol. 38.
Kwan, et al., “Pyrolytic CVD of Poly(organosiloxane) Thin Films”, Chem. Vap. Deposition, 1997, pp. 299-301, vol. 3 No. 6.
Limb, et al., “Growth of fluorocarbon polymer thin films with high CF2fractions and low dangling bond concentrations by thermal chemical vapor deposition”, Appl. Phys. Lett., 1996, pp. 2810-2812, vol. 68, No. 20.
Gleason Karen K.
Herr Daniel
Ober Christopher
Andújar Leonardo
Aston David J.
Cornell Research Foundation Inc.
Flynn Nathan J.
Peters Verny Jones Schmitt & Aston, LLP
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