Electrical data recording and retrieval based on impedance varia

Dynamic information storage or retrieval – Specific detail of information handling portion of system – Electrical modification or sensing of storage medium

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365148, 204281, 205 68, G11B 900, H04R 2300

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active

053233778

ABSTRACT:
Electrical data is recorded and retrieved by producing and detecting impedance change. A layer of high resistivity material on a conductive substrate is used as the recording layer. A conductive probe pressing on it is used for sending writing or reading electrical current flowing in a direction normal to its surface. A large enough electrical voltage pulse is applied on this probe, causing electro-forming in a data spot in the recording layer under the probe, turning the local resistance of this data spot from high to low. This change in resistance or more generally, change in impedance, is utilized to write data. Several kinds of impedance detecting circuits, utilizing the principle of voltage divider circuit or field effect transistors are employed in data reading. A large number of writing/reading units can be integrated compactly.

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A. E. Owen, P. G. Le Comber, G. Sarrabayrouse and W. E. Spear; "New amorphous-silicon electrically programmable nonvolatile switching device," IEE Proc. vol. 129 Pt 1, No. 2, Apr. '82.

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