Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-05-08
2007-05-08
Everhart, Caridad (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S682000, C257SE23019
Reexamination Certificate
active
11003133
ABSTRACT:
A process of making an electrical coupling stack is disclosed. A conductive structure is coupled to a substrate. The coupling includes a crystalline salicide first structure above the conductive structure, a nitrogen-containing amorphous salicide second structure above the crystalline salicide first structure, and a refractory metal third film above the nitrogen-containing amorphous salicide second structure. Processing includes depositing a refractory metal silicide first film over the conductive structure, depositing a refractory metal nitride second film over the refractory metal silicide first film, and depositing the refractory metal third film over the refractory metal nitride second film. Thermal processing is carried out to achieve the electrical coupling stack.
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