Electrical contacts on diamond

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437175, 437187, H01L 2144

Patent

active

050028995

ABSTRACT:
A method for forming ohmic contacts on diamond substrates, where, by irradiating a diamond substrate with radiation having a wavelength in the neighborhood of 193 nm, regions of enhanced electrical conductivity may be formed without substantially heating the substrate surface. Metal films may be applied to obtain ohmic or Schottky type contacts on the irradiated sites. The invention may be used to form regions of anisotropic and isotropic enhanced conductivity. Regions of anisotropic conductivity may be employed as polarizing optical devices.

REFERENCES:
patent: 4296144 (1981-10-01), Maby et al.
patent: 4378629 (1983-04-01), Bozler et al.
patent: 4511783 (1985-04-01), Burgemeister
patent: 4571447 (1986-02-01), Prins
patent: 4646282 (1987-02-01), Mizuno
Williams et al, "Impurity Conduction in Synthetic Semiconducting Diamond," J. Phys. C: Solid St. Phys., 1970, vol. 3, p. 1727.
Collins et al., "Role of Phonons in the Oscillatory Photoconductivity Spectrum of Semiconducting Diamond," Physical Review, vol. 183, No. 3, p. 725, 1969.
Custers, "Type IIb Diamonds," Physica XX, pp. 183-184, 1954.
Fujimori et al., "Characterization of Conducting Diamond Films,".
Glover, "The C-V Characteristics of Schottky Barriers on Laboratory Grown Semiconducting Diamonds," Solid State Electronics, vol. 16, p. 973, 1973.
Prins, "Bipolar Transistor Action in Ion Implanted Diamond," Applied Physical Letters, 41(10), p. 950, 1982.
Moazed et al, "Ohmic Contracts to Semiconducting Diamond," Vacuum, p. 99, 1980.
Lightowlers et al, "Electrical-Transport Measurements on Synthetic Semiconducting Diamond," Physical Review, vol. 151, No. 2, p. 685, 1966.
Bazhenov et al, "Synthetic Diamonds in Electronics (Review)", Sov. Phys. Semicond, 19(A), p. 829, 1985.
Geis et al, "Graphoepitaxy of Germanium on Gratings with Square-Wave and Sawtooth Profiles," Appl. Phys. Lett. 41(6), 1982.
Efremow et al, "Ion-Beam-Assisted Etching of Diamond," Jour. V. Sci. Tech., B3(1), p. 416, 1985.
Geis et al, "Crystalline Silicon on Insulators by Graphoepitaxy", IEEE, 1979.
Sze, Physics of Semiconductor Devices, Bell Lab. Inc., 1981, 30 30.
IEEE Electronic Device Letters, vol. EDL-8, p. 341, 1987.
Rothschild et al, "Excimer-Laser Etching of Diamond and Hard Carbon Films by Direct Writing and Opticl Projection," Jour. Vacuum Sc. Tech., B4(1), p. 310, 1986.
Vavilov et al, "Electronic and Optical Processes in Diamond," Nauka Publishing House, Moscow Office of Physico-Mathematical manuscript of unknown origin dated Feb. 22, 1988.
Moazed et al, "Electrical Contacts to Semiconducting Diamond," Fiscal Year '87 Annual Report SDIO/ONR Crystalline Carbon Materials, 1987.
Geis et al., "High-Temperature Point-Contact Transistors and Schottky Diodes Formed on Synthetic Boron-Doped Diamond".
Huo et al, "Optical Switching Mechanisms in Type IIa Diamond", J. Appl. Phys; vol. 59, Mar. 1986, pp. 2060-2067.
Enckevort, "The Effect of Crystallographic Orientation on the Optical Anistropy of Graphite Layers on Diamond Surfaces", J. Appl. Cryst. (1987), 20, p. 11.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electrical contacts on diamond does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrical contacts on diamond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrical contacts on diamond will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-617033

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.