Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2009-01-20
2010-11-16
Stark, Jarrett J (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE27014, C257SE27015, C438S604000
Reexamination Certificate
active
07834456
ABSTRACT:
A semiconductor structure having a substrate, a seed layer over the substrate; a silicon layer disposed on the seed layer; a transistor device in the silicon layer; a III-V device disposed on the seed layer; and a plurality of electrical contacts, each one of the electrical contacts having a layer of TiN or TaN and a layer of copper or aluminum on the layer of TaN or TiN, one of the electrical contacts being electrically connected to the transistor and another one of the electrical contacts being electrically connected to the III-V device.
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Bettencourt John P.
Davis Michael S.
Kaper Valery S.
LaRoche Jeffrey R.
Tabatabaie Kamal
Daly, Crowley & Mofford & Durkee, LLP
Raytheon Company
Stark Jarrett J
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