Electrical contacts for a semiconductor light emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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C257SE33065, C438S042000

Reexamination Certificate

active

07842963

ABSTRACT:
A process for forming electrical contacts for a semiconductor light emitting apparatus is disclosed. The light emitting apparatus has a first layer of first conductivity type, an active layer for generating light overlying the first layer, and a second layer of second conductivity type overlying the active layer. The process involves forming at least a first and a second elongate electrical contact through the second layer and the active layer to provide electrical connection to the first layer, the first and second contacts oriented at an angle to each other, the first contact having a first end in proximity with the second contact, the first end being sufficiently spaced apart from the second contact such that when current is supplied to the first layer through the contacts, current contributions from the first end of the first contact and the second contact in an area generally between the first end and the second contact cause a current density in the area that is approximately equal to a current density elsewhere along the first and second contacts.

REFERENCES:
patent: 6828596 (2004-12-01), Steigerwald et al.
patent: 7259447 (2007-08-01), Kong et al.
patent: 2005/0056855 (2005-03-01), Lin et al.
patent: 2005/0156177 (2005-07-01), Lin et al.
patent: 2006/0043392 (2006-03-01), Kurahashi et al.
patent: 2006/0192223 (2006-08-01), Lee et al.
patent: 2343994 (2000-05-01), None
International Search Report and Written Opinion, 11 pages.

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