Patent
1990-11-27
1992-08-04
Mintel, William
357 71, 357 65, 357 68, H01L 21283, H01L 2354
Patent
active
051363623
ABSTRACT:
A device is provided by forming a diffusion barrier at the interface between a metalized contact and the surface of a semiconductor substrate. A three-layer sandwich is formed over the contact region and then annealed in free nitrogen. The sandwich is made of a titanium nitride layer interposed between layers of titanium. During the anneal, material from the titanium layer adjacent to the substrate migrates thereinto to produce a highly conductive diffusion region of titanium silicide. Concurrently during the anneal the other layer of titanium, which is exposed to the nitrogen atmosphere, is converted into a backing layer of titanium nitride which enhances the barrier effect of the titanium nitride layer at the center of the sandwich structure. The conversion of titanium to titanium nitride causes a physical expansion in the layer involved. This serves to enhance the thickness of the barrier layer at all locations, but of particular significance at the corners of the contact well. A diffusion region of controlled depth and the deposition of minimal amounts of titanium remote from the contact side itself are advantageous results of the disclosed process.
REFERENCES:
patent: 3701931 (1972-10-01), Revitz et al.
patent: 4574298 (1986-03-01), Yamagishi et al.
patent: 4887146 (1989-12-01), Hinode
patent: 4926237 (1990-05-01), Sun et al.
patent: 4990997 (1991-02-01), Nishida
Doan Trung
Grief Malcolm K.
Clark S. V.
Mintel William
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