Electrical contact for optoelectronic semiconductor chip and...

Details Electrical contact for optoelectronic semiconductor chip and... Electrical contact for optoelectronic semiconductor chip and...

2007-01-16

2007-01-16

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S098000, C257S433000, C257S734000, C257S758000, C257S779000

Reexamination Certificate

active

10789199

ABSTRACT:
An electrical contact for an optoelectronic device which includes a mirror layer (2) of a metal or a metal alloy, a protective layer (3), which serves for reducing the corrosion of the mirror layer (2), a barrier layer (4), a coupling layer (5), and a solder layer (8). A contact of this type is distinguished by high reflectivity, good ohmic contact with respect to the semiconductor, good adhesion on the semiconductor and good adhesion of the layers forming the contact with one another, good thermal stability, high stability with respect to environmental influences, and also solderability and patternability.

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