Electrical contact for a MEMS device and method of making

Details Electrical contact for a MEMS device and method of making Electrical contact for a MEMS device and method of making

2007-11-13

2007-11-13

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S270000, C438S700000, C438S042000, C257SE21320, C257SE21218, C257SE21229, C257SE21245

Reexamination Certificate

active

11214380

ABSTRACT:
A method for making a subsurface electrical contact on a micro-electrical-mechanical-systems (MEMS) device. The contact is formed by depositing a layer of polycrystalline silicon onto a surface within a cavity buried under a device silicon layer. The polycrystalline silicon layer is deposited in the cavity through holes etched through the device silicon and reseals the cavity during the polycrystalline silicon deposition step. The polycrystalline silicon layer can then be masked and etched, or etched back to expose the device layer of the micromachined device. Through the layer of polycrystalline silicon, a center hub of the device may be electrically contacted.

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