Electrical connection for a semiconductor structure

Details Electrical connection for a semiconductor structure Electrical connection for a semiconductor structure

1997-09-10

2000-07-18

Everhart, Caridad

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257751, 257753, 257757, H01L 2348

Patent

active

060911484

ABSTRACT:
The present invention relates to high aspect-ratio electrical connections, wiring trenches, and methods of forming the same in semiconductor devices. In particular, the present invention relates to formation of contacts with refractory metal and/or refractory metal nitride liners that assist in filling of the contacts. Additionally disclosed is the combination of shallow junction fabrication and high aspect-ratio contact formation to form contacts between a shallow junction and microcircuitry wiring. More particularly, the present invention relates to aluminum filled contacts that fill contact corridors, trenches, or vias in semiconductor devices that are initially lined with a titanium layer and at least one other layer. Preferred other layers include CVD, PVD, or reacted TiN, Co, Ge, and Si.

REFERENCES:
patent: 5534463 (1996-07-01), Lee et al.
patent: 5567652 (1996-10-01), Nishio
patent: 5644166 (1997-07-01), Honeycutt et al.
patent: 5672543 (1997-09-01), Chang et al.
patent: 5789317 (1998-08-01), Batra et al.
patent: 5869902 (1999-02-01), Lee et al.

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