Electrical characterization of semiconductor materials

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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Reexamination Certificate

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07898280

ABSTRACT:
A system and method for characterizing electronic properties of a semiconductor sample includes illuminating the surface of the semiconductor sample with a pulse of light, measuring a photoconductance decay in the semiconductor sample after the cessation of the first pulse of light, and analyzing the photoconductance decay. The electronic properties include properties associated with at least one of the bulk of the semiconductor sample and the surface of the semiconductor sample. The pulse of light has a predetermined duration and photon energy higher than energy gap of the semiconductor. The analyzing step determines a first component of the photoconductance decay substantially associated with point imperfections in the semiconductor sample and at least one second component of the photoconductance decay substantially associated with extended imperfections in the semiconductor sample.

REFERENCES:
patent: 2859407 (1958-11-01), Henisch
patent: 3939415 (1976-02-01), Terasawa
patent: 4000458 (1976-12-01), Miller et al.
patent: 4286215 (1981-08-01), Miller
patent: 4891584 (1990-01-01), Kamieniecki et al.
patent: 4949034 (1990-08-01), Imura et al.
patent: 5047713 (1991-09-01), Kirino et al.
patent: 5406214 (1995-04-01), Boda et al.
patent: 5451886 (1995-09-01), Ogita et al.
patent: 5477158 (1995-12-01), Shafer et al.
patent: 5661408 (1997-08-01), Kamieniecki et al.
patent: 5929652 (1999-07-01), Ahrenkiel
patent: 6037797 (2000-03-01), Lagowski et al.
patent: 6104206 (2000-08-01), Verkuil
patent: 6275060 (2001-08-01), Ahrenkiel et al.
patent: 6315574 (2001-11-01), Kamieniecki et al.
patent: 6369603 (2002-04-01), Johnston et al.
patent: 6538462 (2003-03-01), Lagowski et al.
patent: 6909302 (2005-06-01), Kamieniecki et al.
patent: 6911350 (2005-06-01), Tsidilkovski et al.
patent: 6967490 (2005-11-01), Kamieniecki et al.
patent: 7019513 (2006-03-01), Faifer et al.
patent: 7084661 (2006-08-01), Thompson et al.
patent: 7439757 (2008-10-01), Kang et al.
patent: 7504838 (2009-03-01), Zhao et al.
patent: 7656172 (2010-02-01), Andrews et al.
patent: 7663385 (2010-02-01), Kamieniecki
patent: 2007/0273400 (2007-11-01), Kamieniecki
Adria Nieswand, “Thin is in”, R&D Magazine, Dec. 2006.
Industry Strategy Symposium (ISS 2008), SEMI. half Moon Bay, CA [Alexander E. Braun, Semiconductor International, Jan. 29, 2008].
D.T. Stevenson, and R.J. Keyes, “Measurement of Carrier Lifetimes in Germanium and Silicon,”J. Appl. Phys. 26, pp. 190-195 (1955).
H.K. Henish and J. Zucker, “Contactless Method for the Estimation of Resistivity and Lifetime of Semiconductors”, Rev. Sci. Instrum. 27, pp. 409-410 (Jun. 1956).
J.C. Brice and P. Moore, Contactless Resistivity Meter for Semiconductors, J. Sci. Instrum. 38, p. 307 (Jul. 1961).
P.J. Olshefski, “Contactless Method for Measuring Resistivity of Silicon,” Semic. Prod. 4, pp. 34-36 (Dec 1961).
T. Figielski, “Theory of Carrier Recombination at Dislocations in Germanium”, phys. stat. sol. 6, pp. 429-440 (1964) and “Dislocations as Traps for Holes in Germanium”, phys. stat. sol. 9, pp. 555-566 (1965).
G.L. Miller, D.A.H. Robinson, and J.D. Wiley, “Contactless measurement of semiconductor conductivity by radio frequency free carrier power absorption”, Rev. Sci. Instrum. vol. 47(7), 1976, pp. 799-805.
E. Yablonowitch, and T.J. Gmitter, “A Contactless Minority Carrier Lifetime Probe of Heterostructures, Surfaces, Interfaces, and Bulk Wafers”, Solid-State Electron. 35, Mar. 1987, pp. 261-267.
S.M. Sze, “Physics of Semiconductor Devices”, John Wiley & Sons, Inc., New York 1981, Chapter 7.
Dieter K. Schroder, “Semiconductor Material and Device Characterization,” John Wiley & Sons, Inc., New York 1990, Chapter 7.
H. M'saad, J. Michel, J.J. Lappe, and L.C. Kimerling, “Electronic Passivation of Silicon Surfaces by Halogens”, J. Electron. Mat. 23, May 1994, pp. 487-491.
Sinton, R.A. and Cuevas, A., “Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data”, Appl. Phys. Lett. vol. 69(17), 1996, pp. 2510-2512.

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