Electrical apparatus with a metallic layer coupled to a lower re

Details Electrical apparatus with a metallic layer coupled to a lower re Electrical apparatus with a metallic layer coupled to a lower re

1996-11-15

1998-08-04

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

257725, 257728, H01L 2941, H01L 29868, H01L 2315

Patent

active

057898170

ABSTRACT:
An electrical apparatus having a first substrate, a first metallic layer, a semiconductor device, a second metallic layer, and a metallic interconnecting structure is described. The first substrate is of a semiconductor material and has an upper region and a lower region. The substrate provides an electrical path between the upper region and the lower region. The first metallic layer is coupled to the lower region of the substrate. The first metallic layer provides a first external electrical connection. The semiconductor device has an upper region and a lower region. The second metallic layer is coupled to the lower region of the semiconductor device. The second metallic layer provides a second external electrical connection. The metallic interconnecting structure electrically couples the upper region of the first substrate to the upper region of the semiconductor device. A bridge apparatus is also described. In addition, a method of fabricating an electrical apparatus is described.

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