Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-08-12
2000-04-25
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257751, 257761, 257771, 438688, 438687, 438653, 438656, H01L 2941, H01L 2945, H01L 2144, H01L 2128
Patent
active
060547707
ABSTRACT:
An electric solid state device comprises a substrate, an amorphous thin film formed on the substrate, and a conductive thin film formed on the amorphous thin film. In this device, an interatomic distance calculated from a peak position of a halo pattern appearing in diffraction measurement of the material of the amorphous thin film is substantially equal to an interplanar space between those two adjacent specific crystal planes of the material of the conductive thin film, which are defined at least by respective atomic strings arranged in a predetermined direction in the respective planes and separated from each other by the smallest interatomic distance possible.
REFERENCES:
patent: 3743894 (1973-07-01), Hall
patent: 4965656 (1990-10-01), Koubuchi
patent: 4970176 (1990-11-01), Tracy et al.
patent: 5187561 (1993-02-01), Hasunuma et al.
patent: 5409862 (1995-04-01), Wada et al.
patent: 5449641 (1995-09-01), Maeda
patent: 5580823 (1996-12-01), Hegde
patent: 5629236 (1997-05-01), Wada et al.
patent: 5648675 (1997-07-01), Terada
patent: 5705429 (1998-01-01), Yamaha
IBM Tech. D. B. vol. 32 No. 10 B Mar. 1990 "Process in Resistance".
Tsutomu MITSUZUKA, "Highly Preferred [111]Texture in Al Films Deposited on Ultrathin Metal Underlayers", Jpn. J. Appl. Phys. vol. 31 (1992) pp. L1280-L 1283, Part 2, No. 9A, 1 Sept. 1992.
Hasunuma Masahiko
Kaneko Hisashi
Toyoda Hiroshi
Wada Jun-ichi
Jackson, Jr. Jerome
Kabushiki Kaisha Toshiba
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