Electric resistor consisting of at least two monolithically comb

Details Electric resistor consisting of at least two monolithically comb Electric resistor consisting of at least two monolithically comb

1986-02-27

1987-05-19

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 51, 357 231, 357 2312, 307304, 307501, 307264, 338228D, H01L 2978

Patent

active

046672168

ABSTRACT:
Electric resistor, including at least two simultaneously produced monolithically combined MIS field-effect transistors for integrated circuits, each of the transistors having a source electrode and a drain electrode defining a source-drain path, a gate terminal and a channel width to channel length ratio, the transistors being connected in series with each other through the source-drain paths, each respective transistor having the gate terminal thereof connected to one of the source and drain electrodes thereof, and the transistors differ with respect to the channel width to channel length ratios thereof.

REFERENCES:
patent: 4152716 (1979-05-01), Torii et al.
patent: 4173734 (1979-11-01), Hirasawa et al.

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