Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2007-10-16
2010-02-16
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
Reexamination Certificate
active
07663252
ABSTRACT:
An electric power semiconductor device including first and second circuit patterns formed on main surfaces of first and second insulating substrates, respectively, first and second semiconductor chips mounted on the first and second circuit patterns, respectively, a multilayer electrode plate assembly disposed between the first and second insulating substrates, having first, second and third electrode terminals provided with a distance from each other, a first connecting conductor made by wire bonding for connecting the first and second semiconductor chips to the first and second electrode terminals, and a second connecting conductor having an extending portion extended from a part of the third electrode terminal to be connected to the second circuit pattern, and the connection between the extending portion of the third electrode terminal and the second circuit pattern is implemented by a solder.
REFERENCES:
patent: 5402318 (1995-03-01), Otsuka et al.
patent: 5422435 (1995-06-01), Takiar et al.
patent: 6054754 (2000-04-01), Bissey
patent: 6184574 (2001-02-01), Bissey
patent: 6310388 (2001-10-01), Bissey
patent: 6836006 (2004-12-01), Muto et al.
patent: 8-264596 (1996-10-01), None
patent: 2000-164800 (2000-06-01), None
patent: 2000-323647 (2000-11-01), None
patent: 2002-134552 (2002-05-01), None
patent: 2003-133515 (2003-05-01), None
Saiki Seiji
Yamada Junji
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Dao H
Nguyen Tram H
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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